chm1298 - 99f ref. : dschm1298 - 1293 - 20 oct 11 1/6 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cedex france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 55 - 6 5ghz single side band mixer gaas monolithic microwave ic description the chm1298 is a multifunction chip (mfc) which integrates a lo buffer amplifier and a sub - harmonically balanced diode mixer for 2lo suppression and image rejection. it is usabl e both for up - conversion and down - conversion. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounded. this helps to simplify the assembly process. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features broadband performance: 55 12db conversion loss 10db +10dbm lo input power +0dbm input power (1db gain comp.) dc power consumption: 90ma @ 3.5v chip size: 2.10x1.17x0.10mm main characteristics tamb.=+ 25c symbol parameter min typ max unit frf rf frequency range 55 65 ghz flo lo frequency range 27.5 32.5 ghz fif if frequency range dc 5 ghz lc conversion loss 12 db esd protection: electrostatic discharge sensitive device. observe handling precautions!
chm1298 - 99f 55 - 65ghz ssb mixer ref. : dschm1298 - 1293 - 20 oct 11 2 /6 specifications subject to change without notice ro ute dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 electrical characteristics for broadband operation tamb=+25c , vd = 3.5v symbol parameter min typ max unit frf rf frequency range 55 65 ghz flo lo frequency range 27.5 32.5 ghz fif if frequency range dc 5 ghz lc conversion loss 12 db plo lo input power +10 dbm 2xlo leak 2xlo leakage (for plo = +5dbm) - 35 dbm img rej image rejection (1) 10 dbc p1db input power at 1db gain compression +0 dbm p03 input power at 3db gain compression +2 dbm ip3 input 3rd order intercept point +8 dbm lo match lo matching (2) 2.0:1 rf match rf matching (2) 2.0:1 if match if matching 2.0:1 vg gate bias voltage - 0.35 v id bias current with plo = + 10dbm ( 3 ) 90 ma (1) with external quadrature hybrid coupler (reference on request). the minimal value depends on the quality of the external quadrature combi ner. (2) a bonding wire of typically 0.1 to 0.15nh will improve the accesses matching. ( 3 ) around 50 ma without rf power absolute maximum ratings (1) tamb.=+25c symbol parameter values unit vd drain bias voltage 4.0 v id drain bias current 15 0 ma vg gate bias voltage - 2 to +0.4 v p lo maximum lo input power + 15 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +1 5 0 c (1) operation of this device above anyone of these par ameters may cause permanent damage.
55 - 65ghz ssb mixer chm1298 - 99f ref.: dschm1298 - 1293 - 20 oct 11 3 / 6 specifications subject t o change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical on - wafer measurements in up - conversion mode with external combiner bias conditions: tamb=+25c, vd=3.5v, id= 90ma typical on - wafer measurements in down - conversion mode with external combine r bias conditions: tamb=+25c, vd=3.5v, id=90ma if input power (dbm) if input power (dbm) rf frequency (ghz) up-conversion mode with external combiner p lo = +10dbm f if = 1,0ghz -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 lo frequency (ghz) conv. losses & 2xlo leakage (db & dbm) pout 2xlo cl inf cl sup up-conversion mode with external combiner p lo = +10dbm f if = 2,0ghz -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 lo frequency (ghz) conv. losses & 2xlo leakage (db & dbm) pout 2xlo cl inf cl sup up-conversion sup. compression with external combiner lo = 30ghz p lo = +10dbm if = 2,0ghz (rf = 62ghz) -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -15 -13 -11 -9 -7 -5 -3 -1 lo frequency (ghz) output power & conv. losses (dbm & db) pout sup i pout inf q cl sup i cl inf q up-conversion inf. compression with external combiner lo = 30ghz p lo = +10dbm if = 2,0ghz (rf = 58ghz) -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -15 -13 -11 -9 -7 -5 -3 -1 lo frequency (ghz) output power & conv. losses (dbm & db) pout inf i pout sup q cl inf i cl sup q down-conversion mode with external combiner p lo = +10dbm f if = 1,0ghz & 2,0hz -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 52 54 56 58 60 62 64 66 68 lo frequency (ghz) conv. losses & image rejection (db) cl inf q cl sup i cl inf i cl sup q lo freq
chm1298 - 99f 55 - 65ghz ssb mixer ref. : dschm1298 - 1293 - 20 oct 11 4 /6 specifications subject to change without notice ro ute dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 typical on - wafer measurements in up - conversion mode without external combiner bias conditions: tamb=+25c, vd=3.5v, id=90ma up-conversion mode without external combiner p lo = +10dbm f lo = 27,5ghz (f 2lo = 55ghz) -48 -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -5.5 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 if frequency (ghz) conv. losses & 2xlo leakage (db & dbm) conv. loss i ( db ) p2lo/rf i (dbm) p2lo/rf q (dbm) conv. loss q ( db ) f lo (ghz) up-conversion mode without external combiner p lo = +10dbm f lo = 30ghz (f 2lo = 60ghz) -48 -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -5.5 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 if frequency (ghz) conv. losses & 2xlo leakage (db & dbm) conv. loss i ( db ) p2lo/rf i (dbm) p2lo/rf q (dbm) conv. loss q ( db ) f lo (ghz) conv. loss i ( db ) p2lo/rf i (dbm) p2lo/rf q (dbm) conv. loss q ( db ) f lo (ghz) up-conversion mode without external combiner p lo = +10dbm f lo = 32,5ghz (f 2lo = 65ghz) -48 -44 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -5.5 -4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 if frequency (ghz) conv. losses & 2xlo leakage (db & dbm) conv. loss i ( db ) p2lo/rf i (dbm) p2lo/rf q (dbm) conv. loss q ( db ) f lo (ghz) conv. loss i ( db ) p2lo/rf i (dbm) p2lo/rf q (dbm) conv. loss q ( db ) f lo (ghz)
55 - 65ghz ssb mixer chm1298 - 99f ref.: dschm1298 - 1293 - 20 oct 11 5 / 6 specifications subject t o change without notice route dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 chip assembly and mechanical data note: supply fe ed should be bypassed. 25 m diameter g old wire is to be preferred . it is necessary to use an external hybrid quadrature combiner on the if ports if the image rejection functionality is required. bonding pad positions. (chip thickness: 100m. all dimensio ns are in micrometers) cotation : m tolerance : 35m 2 100 1 170 000 000 295 150 625 775 925 105 1 755 1 070 915 1 980 1 980 315
chm1298 - 99f 55 - 65ghz ssb mixer ref. : dschm1298 - 1293 - 20 oct 11 6 /6 specifications subject to change without notice ro ute dpartementale 128, b.p.46 - 91401 orsay cedex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended env ironmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . ordering information ch ip form: chm1298 - 99f/00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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